Manufacturing method of semiconductor device and semiconductor device

ABSTRACT

A semiconductor device includes a die pad, which includes an upper surface and a lower surface, the upper surface forming a rectangular shape in plan view; a plurality of support pins that support the die pad; a plurality of inner leads arranged around the die pad; a plurality of outer leads connected to each of the inner leads; a semiconductor chip which includes a main surface and a back surface and in which a plurality of electrode pads is formed in the main surface; a plurality of wires which electrically couple the electrode pads of the semiconductor chip to the inner leads respectively; and a sealing body that seals the support pins, the inner leads, the semiconductor chip, and the wires. A first support pin of the plurality of support pins is integrally formed together with the die pad. The first support pin is terminated inside the sealing body.

The present application is a Continuation Application of U.S. patentapplication Ser. No. 13/968,289, filed on Aug. 15, 2013, which is basedon Japanese Patent Application No. 2012-197142 filed on Sep. 7, 2012,the entire contents of which are hereby incorporated by reference.

CROSS-REFERENCE TO RELATED APPLICATION

The disclosure of Japanese Patent Application No. 2012-197142 filed onSep. 7, 2012 including the specification, drawings and abstract isincorporated herein by reference in its entirety.

BACKGROUND

The present invention relates to a semiconductor device and amanufacturing method of the semiconductor device, and relates to, forexample, a semiconductor device including support pins that support adie pad and to an effective technique to be applied to assembling thesemiconductor device.

For example, as a lead frame device, Japanese Unexamined PatentApplication Publication (Translation of PCT Application) No. 2002-505523(Patent Document 1) discloses a structure including a lead framemanufactured from a first material, a lot of leads, and a die padmanufactured from a second material.

SUMMARY

In a semiconductor device (semiconductor package) including support pins(also referred to as “support leads”) that support a die pad (alsoreferred to as an “island”) on which a semiconductor chip is mounted,the support pins are arranged at, for example, corner portions or onopposing sides of the die pad and appropriately support the die pad.

Also in a semiconductor device having a structure in which a pluralityof die pads is arranged in a row in order to mount a plurality ofsemiconductor chips, each die pad can be supported by three support pins(supported by three points) by using leads connected to outer leads alsoas support pins of the die pads, and thus the reliability of diebonding, wire bonding and the like is ensured.

However, when trying to increase the number of pins without changing thesize (appearance size) of the semiconductor device main body forfunctional enhancement of the semiconductor device, it is necessary toprovide an independent lead for a signal by reducing the number ofsupport pins that support the die pad, and thus the number of supportpins decreases and the die pad is supported by two points.

As a result, the support state of the die pad becomes unstable.Therefore, if an external load is applied to the die pad in anassembling process of the semiconductor device, the die pad is deformedor vibrated in the vertical direction, and thus trouble may occur in theprocess or the semiconductor chips and wires are damaged.

That is, in a die bonding process and a wire bonding process, a bondingfailure may occur because the die pad vertically moves (vibrates) andsufficient load is not applied to the die pad, or in a resin moldingprocess, the die pad vertically moves (vibrates), and thus thesemiconductor chip and wires are damaged, resulting in a failure of wiredisconnection or the like.

Note that, in the lead frame device disclosed in Patent Document 1,binding bars (the support pins) are manufactured from the first materialand the die pad is manufactured from the second material. Therefore, thelead frame device has a frame structure in which the support pins andthe die pad are formed of different materials and thereafter the supportpins and the die pad are coupled to each other.

In such a frame structure, a coupling portion to the support pins isrequired in the die pad, and thus the die pad has to be considerablylarger than the chip size. That is, the die pad cannot be reduced to thesize as small as the chip size, and thus it is not possible to employthe above frame structure, in which, in a small semiconductor device,the support pins and the die pad are formed as different parts andthereafter they are coupled to each other.

An object of an embodiment disclosed in the present application is toprovide a technique capable of enhancing the reliability of asemiconductor device.

The other problems and the new feature will become clear from thedescription of the present specification and the accompanying drawings.

A manufacturing method of a semiconductor device according to anembodiment includes the steps of providing a lead frame including aplurality of die pads and plurality of support pins, mounting asemiconductor chip over the die pads, electrically coupling, throughwires, electrode pads of the semiconductor chip to inner leads, andforming a sealing body that seals the support pins, the semiconductorchip, and the wires. Furthermore, in the manufacturing method of asemiconductor device, the support pins include a first support pinconnected to an outer lead, a second support pin that is arrangedbetween two of the inner leads and that is connected to a tie bar, and athird support pin connected to a side of the die pad different fromsides to which the first support pin and the second support pin areconnected. The first, the second, and the third support pins areintegrally formed together with each of the die pads.

According to the embodiment described above, it is possible to enhancethe reliability of the semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing an example of a structure of asemiconductor device of an embodiment as seen through a sealing body;

FIG. 2 is a cross-sectional view showing an example of a structure takenalong A-A line in FIG. 1;

FIG. 3 is a cross-sectional view showing an example of a structure takenalong B-B line in FIG. 1;

FIG. 4 is a flowchart showing an example of an assembling procedure ofthe semiconductor device shown in FIG. 1;

FIG. 5 is a process flow diagram showing an example of the partialassembling procedure shown in FIG. 4;

FIG. 6 is a process flow diagram showing an example of the partialassembling procedure shown in FIG. 4;

FIG. 7 is a process flow diagram showing an example of the partialassembling procedure shown in FIG. 4;

FIG. 8 is an enlarged partial plan view showing an example of astructure of a lead frame used in the assembling of the semiconductordevice shown in FIG. 1;

FIG. 9 is a partial plan view showing stability of a die pad of the leadframe shown in FIG. 8;

FIG. 10 is an enlarged partial plan view showing an example of aseparation method of second support pins in a package separation processin the assembling of the semiconductor device shown in FIG. 1;

FIG. 11 is a partial plan view showing a first modification of theseparation method of the second support pins (before injecting a resin)in the assembling of the semiconductor device shown in FIG. 1;

FIG. 12 is an enlarged partial plan view showing a structure of a Dportion in FIG. 11;

FIG. 13 is a partial plan view showing the first modification of theseparation method of the second support pins (after injecting a resin)in the assembling of the semiconductor device shown in FIG. 1;

FIG. 14 is an enlarged partial plan view showing a structure of a Gportion in FIG. 13;

FIG. 15 is an enlarged partial plan view showing a detailed structure ofFIG. 14;

FIG. 16 is an enlarged partial plan view showing a structure of a leadframe of a second modification used in the assembling of thesemiconductor device of the embodiment;

FIG. 17 is a partial plan view showing stability of die pads of the leadframe shown in FIG. 16;

FIG. 18 is an enlarged partial plan view showing a structure of a leadframe of a third modification used in the assembling of thesemiconductor device of the embodiment;

FIG. 19 is a partial plan view showing stability of die pads of the leadframe shown in FIG. 18;

FIG. 20 is an enlarged partial plan view showing a structure of a leadframe of a fourth modification used in the assembling of thesemiconductor device of the embodiment;

FIG. 21 is a partial plan view showing stability of die pads of the leadframe shown in FIG. 20;

FIG. 22 is an enlarged partial plan view and partial cross-sectionalviews showing a structure of a lead frame of a fifth modification usedin the assembling of the semiconductor device of the embodiment;

FIG. 23 is an enlarged partial plan view showing a structure of a leadframe of a sixth modification used in the assembling of thesemiconductor device of the embodiment;

FIG. 24 is a cross-sectional view showing a structure taken along A-Aline in FIG. 23; and

FIG. 25 is an enlarged partial plan view and partial cross-sectionalviews showing a structure of a lead frame of a seventh modification usedin the assembling of the semiconductor device of the embodiment.

DETAILED DESCRIPTION

In the embodiment described below, the description of the same or asimilar portion is not repeated unless particularly required.

Furthermore, the following embodiment will be explained, divided intoplural sections or embodiments, if necessary for convenience. Except forthe case where it shows clearly in particular, they are not mutuallyunrelated and one has relationships such as a modification, details, andsupplementary explanation of some or entire of another.

In the following embodiment, when referring to the number of elements,etc. (including the number, a numeric value, an amount, a range, etc.),they may be not restricted to the specific number but may be greater orsmaller than the specific number, except for the case where they areclearly specified in particular and where they are clearly restricted toa specific number theoretically.

Furthermore, in the following embodiment, it is needless to say that anelement (including an element step etc.) is not necessarilyindispensable, except for the case where it is clearly specified inparticular and where it is considered to be clearly indispensable from atheoretical point of view, etc.

In the following embodiment, regarding an element etc., it is needlessto say that “comprise A”, “consist of A”, “have A”, and “include A” donot exclude elements other than A, except for the case where it isclearly specified that the element is only A. Similarly, in thefollowing embodiments, when shape, position relationship, etc. of anelement etc. is referred to, what resembles or is similar to the shapesubstantially shall be included, except for the case where it is clearlyspecified in particular and where it is considered to be clearly notright from a theoretical point of view. This statement also applies tothe numeric value and range described above.

Hereinafter, the embodiment will be explained on the basis of thedrawings. In all the drawings for explaining embodiments, the samesymbol is attached to the same member and the repeated explanationthereof is omitted. In order to make a drawing intelligible, hatchingmay be attached even if it is a plan view.

Embodiment

FIG. 1 is a plan view showing an example of a structure of asemiconductor device of the embodiment as seen through a sealing body.FIG. 2 is a cross-sectional view showing an example of a structure takenalong A-A line in FIG. 1. FIG. 3 is a cross-sectional view showing anexample of a structure taken along B-B line in FIG. 1.

The semiconductor device of the embodiment shown in FIGS. 1 to 3 is aframe-type semiconductor package assembled by using a dual island-typelead frame 3 shown in FIG. 8 described below. In the present embodiment,as an example of the above-mentioned semiconductor device, a resinsealing-type 8-pin SOP (Small Outline Package) 7 is taken up and astructure and a manufacturing method of the SOP 7 will be described.That is, the semiconductor device of the present embodiment includes aplurality of die pads (islands, tabs), and in the present embodiment,the SOP 7 including two die pads will be taken up and described.

First, a structure of the SOP 7 will be described with reference toFIGS. 1 to 3. The SOP 7 includes a semiconductor chip 1 in which asemiconductor element (semiconductor integrated circuit) 1 d is formed,a semiconductor chip 2 in which a semiconductor element 2 d is formed, adie pad 3 a on which a semiconductor chip 1 is mounted, and a die pad 3h on which a semiconductor chip 2 is mounted.

That is, the die pad 3 a and the die pad 3 h, which are two chipmounting portions, are arranged side by side, and the semiconductor chip1 is mounted on an upper surface 3 aa of the die pad 3 a via a diebonding paste 5 formed of a solder paste. In contrast, the semiconductorchip 2 is mounted on an upper surface aha of the die pad 3 h via thesame die bonding paste 5 formed of a solder paste.

Furthermore, the SOP 7 includes a plurality of (six) inner leads 3 barranged around the die pads 3 a and 3 h, a plurality of (eight) outerleads 3 c integrally formed together with the inner leads 3 b, and aplurality of wires 6 which electrically couple the semiconductor chips 1and 2 to the inner leads 3 b.

That is, in the SOP 7 of the present embodiment, the leads electricallycoupled to electrode pads 1 c and 2 c via the wires 6 are defined as theinner leads 3 b, and there are six inner leads 3 b coupled to the wires6, and the six inner leads 3 b are connected to the outer leads 3 c.

In addition, first support pins 3 d and 3 i of three support pins thatsupport the die pad 3 a or 3 h are coupled to the outer leads 3 crespectively. Therefore, there are a total of eight outer leads 3 cincluding six outer leads 3 c coupled to the inner leads 3 b and twoouter leads 3 c coupled to the first support pins 3 d and 3 i.

Note that the outer lead 3 c is not connected to a second support pin 3e, a third support pin 3 f, a second support pin 3 j, and a thirdsupport pin 3 k.

In addition, as shown in FIGS. 1 and 2, a plurality of electrode pads 1c formed on a front surface (main surface) 1 a of the semiconductor chip1 is electrically coupled to a plurality of inner leads 3 bcorresponding to the electrode pads 1 c, respectively, through aplurality of wires 6. In contrast, a plurality of electrode pads 2 cformed on a front surface (main surface) 2 a of the semiconductor chip 2are electrically coupled to a plurality of inner leads 3 b correspondingto the electrode pads 2 c, respectively, through a plurality of wires 6.

Note that, since the SOP 7 is a wire bonding type, the semiconductorchip 1 is face-up mounted over the upper surface 3 aa of the die pad 3 awith the main surface (front surface) 1 a facing up.

That is, the upper surface 3 aa of the die pad 3 a and a back surface 1b of the semiconductor chip 1 arranged so as to face the upper surface 3aa are coupled to each other via the die bonding paste 5.

In contrast, the semiconductor chip 2 is face-up mounted over the uppersurface 3 ha of the die pad 3 h with the main surface (front surface) 2a facing up. That is, the upper surface 3 ha of the die pad 3 h and aback surface 2 b of the semiconductor chip 2 arranged so as to face theupper surface 3 ha are coupled to each other via the die bonding paste5.

Furthermore, the electrode pads 1 c formed on the front surface 1 a ofthe semiconductor chip 1 are electrically coupled to the inner leads 3b, respectively, via the wires 6. Thereby, the semiconductor chip 1, theinner leads 3 b, and the outer leads 3 c functioning as externalterminals are electrically coupled to each other.

That is, one end of each of the wires 6 is electrically coupled to theelectrode pad 1 c of the semiconductor chip 1. In contrast, the otherend of each of the wires 6 is electrically coupled to the inner lead 3 bcorresponding to each wire 6. In the same manner, the electrode pads 2 cformed on the front surface 2 a of the semiconductor chip 2 are alsoelectrically coupled to the inner leads 3 b, respectively, via the wires6. Thereby, the semiconductor chip 2, the inner leads 3 b, and the outerleads 3 c functioning as external terminals are electrically coupled toeach other.

In addition, one end of each of the wires 6 is electrically coupled tothe electrode pad 2 c of the semiconductor chip 2. In contrast, theother end of each of the wires 6 is electrically coupled to the innerlead 3 b corresponding to each wire 6.

Furthermore, the die pads 3 a and 3 h have the upper surfaces 3 aa and 3ha, respectively, whose plan view is substantially rectangular, and havelower surfaces 3 ab and 3 hb, respectively, opposite to the uppersurfaces 3 aa and 3 ha, and each of the die pads 3 a and 3 h issupported by three support pins.

That is, the die pad 3 a is supported by the first support pin 3 dconnected to the outer lead 3 c, the second support pin 3 e arrangedbetween two inner leads 3 b adjacent to each other, and the other thirdsupport pin 3 f. In the same way, the die pad 3 h is also supported bythe first support pin 3 i connected to the outer lead 3 c, the secondsupport pin 3 j arranged between two inner leads 3 b adjacent to eachother, and the other third support pin 3 k.

Note that the upper surface 3 aa of the die pad 3 a includes a firstside 3 ac, a second side 3 ad, a third side Sae and a fourth side 3 af,and the first support pin 3 d is connected to the first side Sac and thesecond support pin 3 e is connected to the second side Sad opposite tothe first side 3 ac. Furthermore, the third support pin 3 f is coupledto the third side 3 ae different from both the first side Sac to whichthe first support pin 3 d is connected and the second side Sad to whichthe second support pin 3 e is connected.

In contrast, in the same manner as in the die pad 3 a, the upper surfaceaha of the die pad 3 h includes a first side 3 hc, a second side 3 hd, athird side She and a fourth side 3 hf, and the first support pin 3 i isconnected to the first side 3 hc and the second support pin 3 j isconnected to the second side 3 hd opposite to the first side 3 hc.Furthermore, the third support pin 3 k is connected to the third side 3he different from both the first side 3 hc to which the first supportpin 3 i is connected and the second side 3 hd to which the secondsupport pin 3 j is connected.

Moreover, the first support pin 3 d, the second support pin 3 e, and thethird support pin 3 f are integrally formed together with the die pad 3a. In contrast, the first support pin 3 i, the second support pin 3 j,and the third support pin 3 k are integrally formed together with thedie pad 3 h.

Note that no support pin is connected to the fourth side 3 af of the diepad 3 a and the fourth side 3 hf of the die pad 3 h, and the die pad 3 aand the die pad 3 h are arranged so that the fourth side 3 af and thefourth side 3 hf face each other.

In addition, the SOP 7 of the present embodiment is formed of a sealingresin 8 shown in FIG. 6 described later and includes the semiconductorchips 1 and 2, the die pads 3 a and 3 h, the wires 6, the inner leads 3b, and a sealing body 4 that seals each support pin (3 d, 3 e, 3 f, 3 i,3 j, and 3 k).

Meanwhile, it is preferable that the second support pin 3 e thatsupports the die pad 3 a and the second support pin 3 j that supportsthe die pad 3 h are terminated inside the sealing body. This is because,in a process of separating, from the lead frame 3, the support pins inan assembling process of the semiconductor device described later, thereis employed an assembling method in which the second support pins 3 eand 3 j are torn off by a resin injection pressure in a sealing processand thereafter the tips of the second support pins 3 e and 3 j arecovered by a resin.

Therefore, in the SOP 7, the tips of the respective second support pins3 e and 3 j are buried inside the sealing body 4. However, the thirdsupport pins 3 f and 3 k are slightly exposed to the outside of thesealing body 4 as shown in FIG. 3 since, in a process of separating,from the lead frame 3, the support pins in the assembling process, thereis employed an assembling method in which the third support pins 3 f and3 k are cut off after a resin sealing process.

Note that, as to a method of separating the second support pins 3 e and3 j from the lead frame 3, a method may be employed in which the secondsupport pins 3 e and 3 j are cut off after the resin sealing process inthe same manner as the third support pins 3 f and 3 k, and in this case,the second support pins 3 e and 3 j are slightly exposed to the outsideof the sealing body 4 in the same manner as the third support pins 3 fand 3 k.

Here, the inner leads 3 b, the outer leads 3 c, the support pins, andthe die pads 3 a and 3 h are formed of a thin plate member formed of,for example, a copper alloy, an iron-nickel alloy, or the like. Inaddition, the sealing body 4 includes, for example, a thermosettingepoxy resin and is formed in the resin sealing process.

The wires 6 are, for example, gold (Au) wires or copper (Cu) wires.

Furthermore, since the semiconductor device is the SOP 7, as shown inFIG. 2, the outer leads 3 c which are integrally formed together withthe inner leads 3 b respectively, protrude outward from the sidesurfaces of the sealing body 4 in two directions opposite to each other,and each of the outer leads 3 c is bent and formed into a gull-wingshape.

Next, the assembling of the semiconductor device (SOP 7) of the presentembodiment will be described with reference to a flowchart shown in FIG.4. That is, in the present embodiment, as an example of thesemiconductor device, an assembling of an 8-pin dual island-type SOP 7will be described.

FIG. 4 is a flowchart showing an example of an assembling procedure ofthe semiconductor device shown in FIG. 1, FIG. 5 is a process flowdiagram showing an example of the partial assembling procedure shown inFIG. 4, FIG. 6 is a process flow diagram showing an example of thepartial assembling procedure shown in FIG. 4, and FIG. 7 is a processflow diagram showing an example of the partial assembling procedureshown in FIG. 4. In addition, FIG. 8 is an enlarged partial plan viewshowing an example of the structure of the lead frame used in theassembling of the semiconductor device shown in FIG. 1. FIG. 9 is apartial plan view showing stability of the die pad of the lead frameshown in FIG. 8. FIG. 10 is an enlarged partial plan view showing anexample of a separation method of the second support pins in a packageseparation process in the assembling of the semiconductor device shownin FIG. 1.

First, the provision of the lead frame shown in step S1 in FIGS. 4 and 5is performed. In the present embodiment, as shown in FIG. 8, there isprovided the lead frame 3 in which two die pads (islands) 3 a and 3 hand two pairs of three support pins supporting the two die pads 3 a and3 h, respectively, are provided. Furthermore, the lead frame 3 isprovided with the inner leads 3 b arranged around the two die pads 3 aand 3 h, the outer leads 3 c connected to the inner leads 3 brespectively, and tie bars 3 g that couple the outer leads to eachother.

Each outer lead 3 c arranged at an end portion of an outer lead array isconnected to a frame portion 3 q through the tie bar 3 g.

Here, the die pad 3 a and the die pad 3 h are arranged side by side andhave the upper surfaces 3 aa and 3 ha, respectively, whose planar viewis substantially rectangular, and have the lower surfaces 3 ab and 3 hb,respectively, opposite to the upper surfaces 3 aa and 3 ha (see FIG. 3).Each of the die pads 3 a and 3 h is supported by three support pins.That is, each of the die pads 3 a and 3 h is supported at three pointsby the support pins.

Specifically, as shown in FIG. 8, the die pad 3 a is supported by thefirst support pin 3 d connected to the outer lead 3 c, the secondsupport pin 3 e that is arranged between two inner leads 3 b adjacent toeach other and that is connected to the tie bar 3 g, and the thirdsupport pin 3 f connected to the frame portion 3 q. In the same way, thedie pad 3 h is also supported by the first support pin 3 i connected tothe outer lead 3 c, the second support pin 3 j that is arranged betweentwo inner leads 3 b adjacent to each other and that is connected to thetie bar 3 g, and the third support pin 3 k connected to the frameportion 3 q.

Note that the first support pin 3 d, the second support pin 3 e, and thethird support pin 3 f are integrally formed together with the die pad 3a. In contrast, the first support pin 3 i, the second support pin 3 j,and the third support pin 3 k are integrally formed together with thedie pad 3 h.

In addition, the upper surface 3 aa of the die pad 3 a includes thefirst side 3 ac, the second side 3 ad, the third side Sae and the fourthside 3 af, and the first support pin 3 d is coupled to the first side 3ac and the second support pin 3 e is coupled to the second side 3 adconnected to the first side 3 ac. Furthermore, the third support pin 3 fis connected to the third side 3 ae different from both the first side 3ac to which the first support pin 3 d is connected and the second side 3ad to which the second support pin 3 e is connected.

In contrast, in the same manner as in the die pad 3 a, the upper surfaceaha of the die pad 3 h includes a first side 3 hc, a second side 3 hd, athird side She and a fourth side 3 hf, and the first support pin 3 i isconnected to the first side 3 hc and the second support pin 3 j isconnected to the second side 3 hd opposite to the first side 3 hc.Moreover, the third support pin 3 k is connected to the third side 3 hedifferent from both the first side 3 hc to which the first support pin 3i is connected and the second side 3 hd to which the second support pin3 j is connected.

Note that no support pin is connected to the fourth side 3 af of the diepad 3 a and the fourth side 3 hf of the die pad 3 h, and the die pad 3 aand the die pad 3 h are arranged so that the fourth side 3 af and thefourth side 3 hf face each other.

Here, the lead frame 3 including the inner leads 3 b, the outer leads 3c, the support pins, the die pads 3 a and 3 h, the tie bars 3 g, theframe portion 3 q, and the like is formed by a thin plate member formedof, for example, a copper alloy, an iron-nickel alloy, or the like.

As described above, in the lead frame 3 of the present embodiment, eachof the two die pads 3 a and 3 h has a three-point support configurationby the three support pins, and as shown in an A portion in FIG. 8, eachof the second support pins 3 e and 3 j included in the two pairs of thethree support pins is arranged between two inner leads 3 b adjacent toeach other and coupled to the tie bar 3 g. Furthermore, the two pairs ofthree support pins are integrally formed together with the die pads 3 aand 3 h respectively.

Here, a balance (degree of stability) of a support form of the two diepads 3 a and 3 h in the lead frame 3 of the present embodiment will bedescribed with reference to FIG. 9. FIG. 9 shows balances betweensupport positions of the die pads 3 a and 3 h, each of which issupported by three points, in the lead frame 3 of the presentembodiment. In each of the die pads 3 a and 3 h, a triangle is formed byusing the support positions as points, and whether or not the shape ofthe triangle is well-balanced (whether or not the shape of the trianglehas an extremely sharp angle) is evaluated.

As shown in FIG. 9, the shape of the triangle of both the triangle A ofthe die pad 3 a and the triangle B of the die pad 3 h is well-balanced,and thus it can be found that the die pads 3 a and 3 h are in a supportstate of a high degree of stability.

After the provision of the lead frame, the die bonding shown in step S2in FIGS. 4 and 5 is performed. In the die bonding process, first, thedie bonding paste coating shown in S2-1 in FIG. 5 is performed. That is,the die pads 3 a and 3 h of the lead frame 3 are coated with a solderpaste that is the die bonding paste 5. Furthermore, the chip mountingshown in S2-2 in FIG. 5 is performed.

Here, as shown in FIG. 3, the semiconductor chip 1 is mounted, via thedie bonding paste 5, over the upper surface 3 aa of the die pad 3 a andthe semiconductor chip 2 is mounted, via the die bonding paste 5, overan upper surface aha of the die pad 3 h. Note that, as shown in FIG. 1,the electrode pads 1 c are formed on the front surface 1 a of thesemiconductor chip 1 and the electrode pads 2 c are formed on the frontsurface 2 a of the semiconductor chip 2.

When the chips are mounted, a predetermined load is applied to thesemiconductor chips 1 and 2. However, since each of the die pads 3 a and3 h of the lead frame 3 of the present embodiment is supported with highstability at three points by the three support pins, it is possible toreduce the vertical movement (vibration) of the die pads 3 a and 3 h.

After the completion of the die bonding, the wire bonding shown in stepS3 in FIGS. 4 and 6 is performed. In the wire bonding process, as shownin FIG. 1, the electrode pads 1 c of the semiconductor chip 1 and theelectrode pads 2 c of the semiconductor chip 2 are electrically coupled,via the wires 6, to the inner leads 3 b corresponding to each electrodepad.

Even at the time of the wire bonding, a predetermined load or anultrasonic wave is applied to the semiconductor chips 1 and 2. However,since each of the die pads 3 a and 3 h of the lead frame 3 of thepresent embodiment is supported with high stability at three points bythe three support pins, it is possible to reduce the vertical movement(vibration) of the die pads 3 a and 3 h at the time of the wire bonding.

After the completion of the wire bonding, the resin sealing (resinmolding) shown in step S4 in FIGS. 4 and 6 is performed. That is, thesupport pins, the semiconductor chips 1 and 2, the die pads 3 a and 3 h,the inner leads 3 b, and wires 6 are sealed by the sealing resin 8 shownin FIG. 6 and a sealing body 4 is formed.

At this time, the lead frame 3 to which the wires are bonded is arrangedover a lower molding die 9 a of a resin molding die 9 as a work piece,then the lead frame 3 is clamped by the lower molding die 9 a and anupper molding die 9 b, and furthermore, a resin sealing is performed byinjecting the sealing resin 8 into a cavity 9 c formed by the lowermolding die 9 a and the upper molding die 9 b.

Even at the time of resin injection in the resin sealing process, apressure due to the resin injection is applied to the semiconductorchips 1 and 2 and the die pads 3 a and 3 h. However, since each of thedie pads 3 a and 3 h of the lead frame 3 of the present embodiment issupported with high stability at three points by the three support pins,it is possible to reduce the vertical movement (vibration) of the diepads 3 a and 3 h at the time of the resin injection.

After completion of the resin sealing, the post cure shown instep S5 inFIGS. 4 and 7 is performed. That is, the sealing body 4 formed in theresin sealing process and the like is heat-treated and cured.

After completion of the post cure, the deburring/external plating shownin step S6 in FIG. 4 is performed. That is, resin burrs and the likeformed in the resin sealing process and the like are removed andexternal plating is applied to the outer leads 3 c and the like.

After completion of the deburring/external plating, the packageseparation/lead trim and form shown in step S7 in FIGS. 4 and 7 isperformed. That is, as shown in FIG. 7, each of the outer leads 3 c iscut off and separated from the lead frame 3 and each outer lead 3 c isbent and formed. In the present embodiment, each outer lead 3 c is bentand formed into a gull-wing shape.

In the package separation process, as shown in FIG. 10, first, the tiebars 3 g between the outer leads 3 c adjacent to each other are cut offby a tie bar cut punch 10 (A portion), and at the same time, the secondsupport pins 3 e and 3 j are cut off by the tie bar cut punch 10 (Bportion and C portion).

Namely, since both the second support pins 3 e and 3 j are connected tothe tie bars 3 g, both the second support pins 3 e and 3 j can be cutoff by the tie bar cut punch 10 together with the tie bars 3 g. That is,both the second support pins 3 e and 3 j can be easily cut off withoutbeing left in the tie bar cut process.

After the package separation/lead trim and form, the characteristicscreening shown in step S8 in FIG. 4 is performed. That is, anelectrical characteristic test is performed on the assembled SOP 7 anddefective or non-defective product is determined.

After the characteristic screening, the marking shown in step S9 isperformed on the SOP 7 which is determined to be a non-defectiveproduct. Here, for example, information such as a model number or thelike of the product is marked on the front surface of the sealing body4.

After the marking, the taping shown in step S10 in FIG. 4 is performedand further the packing/shipping shown in step S11 is performed.

According to the manufacturing method of a semiconductor device and thesemiconductor device of the present embodiment, two pairs of the threesupport pins supporting the die pads 3 a and 3 h include the firstsupport pins 3 d and 3 i, the second support pins 3 e and 3 j, and thethird support pins 3 f and 3 k, and furthermore each of the firstsupport pins 3 d and 3 i, the second support pins 3 e and 3 j, and thethird support pins 3 f and 3 k is integrally formed together with eachof the two die pads 3 a and 3 h. Thereby, each of the die pads 3 a and 3h is supported at three points, and thus it is possible to reduce thevertical movement (vibration) of each of the die pads 3 a and 3 h in theassembling process.

That is, each of the die pads 3 a and 3 h is supported in a balancedmanner at three points, and thus it is possible to reduce the verticalmovement (vibration) of each of the die pads 3 a and 3 h in the diebonding process, the wire bonding process and the like. Thereby, asufficient load for bonding can be applied, and thus it is possible tosuppress the occurrence of a bonding failure.

Since the die pads are supported in a balanced manner at three points,it is possible to reduce the vertical movement (vibration) of the diepads at the time of the resin injection in the resin sealing process. Asa result, at the time of the resin injection, it is possible to reducedamage done to the semiconductor chips and the wires, and thus it ispossible to suppress the occurrence of a defect such as a broken wire.

As a result, it is possible to enhance the reliability of thesemiconductor device.

By arrangement of each of the second support pins 3 e and 3 j betweenthe inner leads, it is possible to increase the number of pins of thesemiconductor device without changing the size (appearance size) of thesemiconductor device main body, and thus functional enhancement of thesemiconductor device can also be addressed. That is, by connecting, tothe tie bar 3 g, each of the second support pins 3 e and 3 j arrangedbetween the inner leads 3 b, it is possible to support the die pads 3 aand 3 h without using signal pins. Thereby, it is possible to increasethe number of signal pins, and thus the function of the semiconductordevice can be enhanced.

Furthermore, by arrangement of each of the second support pins 3 e and 3j between the inner leads 3 b, it is possible to ensure a distancebetween the inner leads 3 b adjacent to each other, and thus it ispossible to prevent migration generated between the inner leads 3 b.

Note that, when the semiconductor device is a small semiconductordevice, an area for performing the wire bonding is required in a secondbonding portion (stitch bonding portion) of the inner leads 3 b, andthus it is not possible to bring the outer peripheries of the die pads 3a and 3 h close to the outer periphery of the sealing body 4. That is,it is not possible to form each of the die pads 3 a and 3 h to be muchlarger than the semiconductor chips 1 and 2. Therefore, in the case of aframe structure in which the support pins and the die pads are formed asdifferent parts and thereafter they are coupled to each other, acoupling portion to the support pins is required to be provided in thedie pads. However, it is not possible to form the die pads to be muchlarger than the semiconductor chips 1 and 2, and as a result, there isno space to provide the coupling portion in the die pads, thereby itbeing difficult to employ the above frame structure. However, in thesemiconductor device of the present embodiment, two pairs of threesupport pins are integrally formed together with the die pads 3 a and 3h respectively, and thus the coupling portion is not required to beprovided. Therefore, the size of the die pads 3 a and 3 h can be assmall as the chip size. As a result, it is possible to address thereduction of the size of the semiconductor device (SOP 7).

Furthermore, in the frame structure in which the support pins and thedie pads are formed as different parts, the lead frame is formed of twotypes of materials. Therefore, the cost is high and a processing cost ofcoupling the support pins and the die pads to each other is alsorequired, and thus the cost of the semiconductor device furtherincreases.

Moreover, also in ensuring the coupling accuracy at the time of couplingthe support pins and the die pads to each other, the size of the diepads needs to be much larger than the chip size, and thus the aboveframe structure cannot be applied to a small semiconductor device.

Next, modifications of the present embodiment will be described.

FIG. 11 is a partial plan view showing a first modification of theseparation method of the second support pins (before injecting a resin)in the assembling of the semiconductor device shown in FIG. 1. FIG. 12is an enlarged partial plan view showing a structure of a D portion inFIG.

11. FIG. 13 is a partial plan view showing the first modification of theseparation method of the second support pins (after injecting a resin)in the assembling of the semiconductor device shown in FIG. 1. FIG. 14is an enlarged partial plan view showing a structure of a G portion inFIG. 13. FIG. 15 is an enlarged partial plan view showing a detailedstructure of FIG. 14.

The first modification shown in FIGS. 11 to 15 shows a modification ofthe separation method of the second support pins 3 e and 3 j arrangedbetween the inner leads 3 b adjacent to each other, the firstmodification is different from the method of cutting off the supportpins together with the tie bars 3 g in the tie bar cut process after theresin sealing as shown in FIG. 10, and the first modification is amethod of separating the support pins by tearing off the support pins byan injecting pressure of a resin in the resin sealing process. That is,in the resin sealing process, the inside of the tie bars 3 g is filledwith the sealing resin 8 shown in FIG. 13, and thus the pressure of thesealing resin 8, acting on the tie bars 3 g is used. The tie bars 3 gare pressed and deformed by the pressure of the sealing resin 8 when theresin is injected, and the second support pins 3 e and 3 j connected tothe tie bars 3 g are torn off by the deformation of the tie bars 3 g.

Specifically, first, as shown in FIGS. 11 and 12, before the sealingresin 8 of FIG. 13 is injected into the resin molding die 9 in FIG. 6,block members 11 are arranged outside the tie bars 3 g with a clearance12 of a distance E from the tie bar 3 g being provided between them. Atthis time, as shown in FIG. 12, when an allowable amount of deformationof the tie bar 3 g deformed by the pressure of the sealing resin 8 isdefined as E, the amount of deformation of the tie bar 3 g can be set bythe distance E of the clearance 12 between the block member 11 and thetie bar 3 g.

In addition, by the distance E being set to be equal to or greater thana distance F between a torn-off portion 3 r in FIG. 11 of the secondsupport pins 3 e and 3 j and the outer periphery of the sealing body 4in FIG. 12 (the contour of the mold) formed by the resin sealing (E>=F),the support pins can be torn off inside the outer periphery of thesealing body 4.

Furthermore, since the maximum amount of deformation of the tie bar 3 gis the distance E, it is possible to prevent the deformation of the tiebar 3 g from being greater than necessary.

Note that, as shown in an H portion in FIG. 12, the tie bar 3 g to whichno support pin is connected need not be deformed, and thus the blockmember 11 is arranged at a position slightly in contact with the tie bar3 g without providing a clearance from the tie bar 3 g.

Furthermore, as shown in portions I in FIG. 12, it is preferable thatthere is formed a groove portion 3 p (for example, V-groove), a stepportion, or a notch in the torn-off portion 3 r shown in FIG. 11 nearthe tip of the second support pins 3 e and 3 j so that the cross-sectionarea of the torn-off portion 3 r is reduced. By the groove portion 3 p,the step portion, or the notch being formed in the torn off portion 3 rnear the tip of the second support pins 3 e and 3 j, the support pinscan be easily torn off and the stress applied to the support pins 3 eand 3 j can be reduced, when the second support pins 3 e and 3 j aretorn off.

It is preferable that the torn-off portions 3 r of the second supportpins 3 e and 3 j are formed at positions inside the outer periphery ofthe sealing body 4 to be formed. Thereby, it is possible to seal thesecond support pins 3 e and 3 j including the tips thereof inside thesealing body 4.

Furthermore, the timing when the deformation of the tie bars 3 g and thefracture (tearing off) of the second support pins 3 e and 3 j occur is,as shown in FIGS. 13 and 14, the final stage of the resin sealingprocess after the sealing resin 8 is injected via a gate 9 d of theresin molding die 9 (see FIG. 6) and a resin flow 8 a fills the insideof the resin molding die 9, that is, the timing when the filling of thesealing resin 8 is substantially completed and a set final pressure isapplied. At this time, the sealing resin 8 is a fluid that has not yetcured, a pressure P of the sealing resin 8 is applied to the tie bars 3g as shown in FIG. 14, the tie bars 3 g are deformed by the pressure Pas shown in areas around portions I in FIG. 14, and the second supportpins 3 e and 3 j are torn off at the torn-off portions 3 r thereof bythe deforming force of the tie bars 3 g, as shown in portions I in FIG.15.

Note that the second support pins 3 e and 3 j are fractured and thesealing resin 8 flows into a gap between the fractured support pins, butthe amount of the sealing resin 8 that flows into the gap is extremelysmall compared with the volume of the sealing body 4, and thus the diepads 3 a and 3 h do not vibrate (shift) vertically and are not deformedeven though the holding forces of the die pads 3 a and 3 h are lost dueto the fracture of the support pins.

After the second support pins 3 e and 3 j are torn off, the tips of thesecond support pins 3 e and 3 j are covered by the sealing resin 8. Thatis, the gaps between the second support pins 3 e and 3 j fracturedinside and the outer periphery of the sealing body 4 (the gaps betweenthe torn-off pins shown in the portions I in FIG. 15) are filled withthe sealing resin 8, and thus the torn-off tips of the second supportpins 3 e and 3 j are brought into a state of being buried in the sealingbody 4.

After completion of the sealing, the second support pins 3 e and 3 jthat are torn off at the torn-off portions 3 r are buried in the sealingbody 4 and cannot be seen from outside, and thus the appearance of theSOP 7 is not damaged.

In addition, it is possible to prevent the degradation of the humidityresistance due to penetration of liquid from the outside of the sealingbody 4, prevent the degradation of the insulation resistance, andprevent the generation of the migration between a support pin and a leadadjacent to the support pin, and thus the reliability of the SOP 7 canbe enhanced.

Furthermore, after the second support pins 3 e and 3 j are torn off bythe deformations of the tie bars 3 g, the deformations of the tie bars 3g hit the block members 11 and stop, and thus the tie bars 3 g are notdeformed any more, so that it is possible to prevent the respectiveinner leads 3 b connected to the tie bars 3 g from being deformed.

Note that, as shown in J portions in FIG. 12, the groove portion 3 psuch as a V-groove, a step portion or the like are formed at positionslocated inside the outer periphery of the sealing body 4 of therespective inner leads 3 b, and thus it is possible to prevent thedegradation of the humidity resistance, the degradation of theinsulation resistance and the like due to penetration of liquid from theoutside, and to enhance the reliability of the SOP 7.

Next, the second to the fourth modifications will be described.

FIG. 16 is an enlarged partial plan view showing a structure of a leadframe of the second modification used in the assembling of thesemiconductor device of the embodiment. FIG. 17 is a partial plan viewshowing stability of die pads of the lead frame shown in FIG. 16, andFIG. 18 is an enlarged partial plan view showing a structure of a leadframe of the third modification used in the assembling of thesemiconductor device of the embodiment. Moreover, FIG. 19 is a partialplan view showing stability of die pads of the lead frame shown in FIG.18, FIG. 20 is an enlarged partial plan view showing a structure of alead frame of the fourth modification used in the assembling of thesemiconductor device of the embodiment, and FIG. 21 is a partial planview showing stability of die pads of the lead frame shown in FIG. 20.

In the second modification shown in FIGS. 16 and 17, in the lead frame 3in which two die pads 3 a and 3 h are provided side by side, two secondsupport pins 3 e and 3 j connected to each of the two die pads 3 a and 3h are arranged adjacent to each other as shown in an A portion in FIG.16 and both die pads 3 a and 3 h are pads each having a three-pointsupport configuration of being supported at three points by threesupport pins.

Furthermore, the second support pins 3 e and 3 j of each of the threesupport pins are connected to a tie bar 3 g.

Also in the lead frame 3 of the second modification shown in FIGS. 16and 17, as shown in FIG. 17, the triangular shapes of both the triangleA of the die pad 3 a and the triangle B of the die pad 3 h arewell-balanced, and thus it can be found that the die pads 3 a and 3 hare in a support state of a high degree of stability.

In addition, in the third modification shown in FIGS. 18 and 19, in thelead frame 3 in which two die pads 3 a and 3 h are provided side byside, two second support pins 3 e and 3 j connected to each of the twodie pads 3 a and 3 h are arranged between inner leads 3 b adjacent toeach other as shown in portions A in FIG. 18 and each of the secondsupport pins 3 e and 3 j is connected to a tie bar 3 g.

Therefore, both die pads 3 a and 3 h have three-point supportconfigurations of being supported by three support pins.

Also in the lead frame 3 of the third modification shown in FIGS. 18 and19, as shown in FIG. 19, the triangular shapes of both the triangle A ofthe die pad 3 a and the triangle B of the die pad 3 h are well-balanced,and thus it can be found that the die pads 3 a and 3 h are in a supportstate of a high degree of stability.

In addition, in the fourth modification shown in FIGS. 20 and 21, in thelead frame 3 in which two die pads 3 a and 3 h are provided side byside, each of two second support pins 3 e and 3 j connected to the twodie pads 3 a and 3 h, respectively, is arranged between inner leads 3 band connected to a tie bar 3 g, as shown in portions A in FIG. 20.Furthermore, one die pad 3 a is also supported by a fourth support pin 3m shown in a B portion in FIG. 20, which is connected to a tie bar 3 g.

That is, the die pad 3 a has a four-point support configuration of beingsupported by four support pins and the die pad 3 h has a three-pointsupport configuration of being supported by three support pins.

The lead frame 3 of the fourth modification shown in FIGS. 20 and 21also includes the die pad 3 a having a four-point support configurationand the die pad 3 h having a three-point support configuration, and asshown in FIG. 21, the quadrangular and triangular shapes of thequadrangle A of the die pad 3 a and the triangle B of the die pad 3 h,respectively, are well-balanced, and thus it can be found that the diepads 3 a and 3 h are in a support state of a high degree of stability.

Also in the SOP 7 assembled by using the lead frame 3 of the second tothe fourth modifications described above, it is possible to obtain thesame effects as those obtained by the SOP 7 shown in FIGS. 1 to 3 and bythe assembling of the SOP 7.

Next, the fifth to the seventh modifications will be described.

FIG. 22 is an enlarged partial plan view and partial cross-sectionalviews showing a structure of a lead frame of the fifth modification usedin the assembling of the semiconductor device of the embodiment. FIG. 23is an enlarged partial plan view showing a structure of a lead frame ofthe sixth modification used in the assembling of the semiconductordevice of the embodiment. FIG. 24 is a cross-sectional view showing astructure taken along A-A line in FIG. 23. In addition, FIG. 25 is anenlarged partial plan view and partial cross-sectional views showing astructure of a lead frame of the seventh modification used in theassembling of the semiconductor device of the embodiment.

The fifth modification shown in FIG. 22 is a lead frame 3 having a shapein which two die pads 3 a and 3 h are provided side by side and each oftwo second support pins 3 e and 3 j connected to the two die pads 3 aand 3 h respectively is arranged between inner leads 3 b and isconnected to a tie bar 3 g in the same manner as the die pads 3 a and 3h of the lead frame 3 shown in FIG. 8.

Furthermore, in one die pad 3 a, bent portions 3 n are formed in some ofthe support pins (here, the first support pin 3 d and the third supportpin 3 f) that support the die pad 3 a and in an edge portion of the diepad 3 a.

That is, as shown in an A portion and a B portion in FIG. 22, the bentportion 3 n is formed in the first support pin 3 d and the third supportpin 3 f along the extending direction of the support pins, and anotherbent portion 3 n connected to the above bent portions 3 n is formed in apart of edge portion (end portion) of the die pad 3 a. Note that thebent portions 3 n may be formed so that the cross-section of the supportpins has an inverted V-shape as shown in the A portion and the B portionor may be formed so that the cross-section has a V-shape.

By the formation of the bent portions 3 n in the edge portion (endportion) of the die pad 3 a and the support pins, it is possible toreduce the vertical movement (vibration) of the die pad 3 a in the diebonding process, the wire bonding process, and the like.

Moreover, the shapes of contact surfaces of the lower molding die 9 aand the upper molding die 9 b of the resin molding die 9 shown in FIG. 6when the resin sealing is performed are caused to correspond to theshapes of the bent portions 3 n of the support pins, and thus it ispossible to reduce the vertical movement (vibration) of the die pad whenthe resin is injected in the resin sealing process. As a result, thereliability of the semiconductor device can be enhanced.

Note that the bent portions 3 n in the edge portion (end portion) of thedie pad and in the support pins may be formed in any one of the die padsor any one of the support pins, or may be formed in the die pads or thesupport pins.

Next, in the same manner as the die pads 3 a and 3 h of the lead frame 3shown in FIG. 8, the sixth modification shown in FIGS. 23 and 24 is alead frame 3 having a shape in which two die pads 3 a and 3 h areprovided side by side and each of two second support pins 3 e and 3 jconnected to the two die pads 3 a and 3 h respectively is arrangedbetween inner leads 3 b and is connected to a tie bar 3 g.

In the lead frame 3 of the sixth modification, as shown in a Q portionand an R portion in FIG. 23, a folded portion 3 ag is formed in at leastone edge portion (end portion) corresponding to one of four sides ofeach of the die pads 3 a and 3 h. Here, as shown in FIG. 24, the foldedportions 3 ag are formed to be folded toward the lower surfaces 3 ab and3 hb.

In this way, by the formation of the folded portions 3 ag so as to befolded toward the lower surfaces 3 ab and 3 hb, the mounting of thesemiconductor chips 1 and 2 cannot be prevented.

Note that the folded portion 3 ag may be formed corresponding to atleast any side of one die pad of the die pads.

As described above, by the formation of the folded portions Sag in thedie pad 3 a and the die pad 3 h, it is possible to enhance the rigidityof the die pads 3 a and 3 h themselves. As a result, it is possible toreduce the vertical movement (vibration) of each of the die pads 3 a and3 h in the die bonding process, the wire bonding process, and further,the resin sealing process. Accordingly, the reliability of thesemiconductor device can be enhanced.

Furthermore, in the same manner as the die pads 3 a and 3 h of the leadframe 3 shown in FIG. 8, the seventh modification shown in FIG. 25 is alead frame 3 having a shape in which two die pads 3 a and 3 h areprovided side by side and each of two second support pins 3 e and 3 jconnected to the two die pads 3 a and 3 h respectively is arrangedbetween inner leads 3 b and is connected to a tie bar 3 g.

Moreover, the shape of the lead frame 3 in FIG. 25 is a combined shapeof the bent portions 3 n (A portion and B portion) in the support pinsand the edge portion (end portion) of the die pad in FIG. 22, and thefolded portions 3 ag (Q portion and R portion) in another edge portion(another end portion) of the die pads in FIG. 23.

Thereby, the rigidity of the die pads themselves can be enhanced, and atthe same time, the rigidity of the support pins can also be enhanced.

As a result, it is possible to reduce the vertical movement (vibration)of the die pad 3 a in the die bonding process, the wire bonding process,and the like. Furthermore, the shapes of the contact surfaces of thelower molding die 9 a and the upper molding die 9 b of the resin moldingdie 9 shown in FIG. 6 when the resin sealing is performed are caused tocorrespond to the shapes of the bent portions 3 n of the support pins,and thus it is possible to reduce the vertical movement (vibration) ofthe die pad when the resin is injected in the resin sealing process.

As a result, it is possible to enhance the reliability of thesemiconductor device.

Note that the folded portion 3 ag and the bent portion 3 n in the edgeportion (end portion) of the die pad and the bent portion 3 n in thesupport pin may be formed in any one of the die pads or any one of thesupport pins, or may be formed in the die pads or the support pins.

Although the invention made by the inventors has been specificallydescribed on the basis of the embodiment, it is needless to say that thepresent invention is not limited to the foregoing embodiment, and can bevariously modified within the scope not departing from the gist of theinvention.

For example, in the embodiment described above, while the SOP is takenup and described as an example of the semiconductor device, thesemiconductor device may be other semiconductor devices if thesemiconductor devices include the die pads and the support pins thatsupport the die pads. That is, the semiconductor device may be adiscrete device other than SOP, and further, may be a semiconductordevice such as QFN (Quad Flat Non-leaded Package) or QFP (Quad FlatPackage).

What is claimed is:
 1. A semiconductor device comprising: a die pad, which includes an upper surface and a lower surface opposite to the upper surface, the upper surface forming a rectangular shape in plan view; a plurality of support pins that support the die pad; a plurality of inner leads arranged around the die pad; a plurality of outer leads connected to each of the inner leads; a semiconductor chip which includes a main surface and a back surface opposite to the main surface and in which a plurality of electrode pads is formed in the main surface, the semiconductor chip being mounted over the die pad so that the back surface faces the upper surface of the die pad; a plurality of wires which electrically couple the electrode pads of the semiconductor chip to the inner leads respectively; and a sealing body that seals the support pins, the inner leads, the semiconductor chip, and the wires, wherein a first support pin of the plurality of support pins is integrally formed together with the die pad, wherein the first support pin is terminated inside the sealing body.
 2. The semiconductor device according to claim 1, wherein a tip of the first support pin is buried inside the sealing body.
 3. The semiconductor device according to claim 1, wherein the support pins include a first support pin arranged between any two of the inner leads.
 4. The semiconductor device according to claim 1, Wherein the support pins include a second support pin connected to the outer lead.
 5. The semiconductor device according to claim 4, Wherein the support pins include a third support pin connected to a side of the die pad different from sides to which the first support pin and the second support pin are connected.
 6. The semiconductor device according to claim 1, wherein a folded portion is formed in an edge portion of the die pad.
 7. The semiconductor device according to claim 5, wherein a bent portion is formed in at least any of the first, the second, and the third support pins. 